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IPD70R900P7SAUMA1
Power MOSFET, N Channel, 700 V, 6 A, 0.9 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD70R900P7SAUMA1
Newark Part No.43AC3273
Product RangeCoolMOS P7
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.911 |
| 10+ | $0.825 |
| 25+ | $0.757 |
| 50+ | $0.688 |
| 100+ | $0.620 |
| 250+ | $0.588 |
| 500+ | $0.555 |
| 1000+ | $0.502 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD70R900P7SAUMA1
Newark Part No.43AC3273
Product RangeCoolMOS P7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds700V
Continuous Drain Current Id6A
On Resistance Rds(on)0.74ohm
Drain Source On State Resistance0.9ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd30.5W
Power Dissipation30.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
700V CoolMOS™ P7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and recommended for Flyback topologies for example used in chargers, adapters, lighting applications, etc.
- Extremely low losses due to very low FOM Rds(on)*Qg and Rds(on)*Eoss
- Excellent thermal behaviour
- Integrated ESD protection diode
- Low switching losses (Eoss)
- Qualified for standard grade applications
- Cost competitive technology
- Lower temperature
- High ESD ruggedness
- Enables efficiency gains at higher switching frequencies
- Enables high power density designs and small form factors
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
700V
On Resistance Rds(on)
0.74ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
30.5W
No. of Pins
3Pins
Product Range
CoolMOS P7
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.9ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
30.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate