Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD80R360P7ATMA1
Newark Part No.24AC9045
Product RangeCoolMOS P7
Technical Datasheet
7,968 In Stock
Need more?
609 Delivery in 1-3 Business Days(US stock)
7359 Delivery in 2-4 Business Days(UK stock)
Order before 9pm
Quantity | Price |
---|---|
1+ | $2.910 |
10+ | $2.590 |
25+ | $2.350 |
50+ | $2.130 |
100+ | $1.890 |
250+ | $1.760 |
500+ | $1.600 |
1000+ | $1.530 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.91
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD80R360P7ATMA1
Newark Part No.24AC9045
Product RangeCoolMOS P7
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id13A
On Resistance Rds(on)0.31ohm
Drain Source On State Resistance0.36ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation Pd84W
Power Dissipation84W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
800V CoolMOS™ P7 power transistor. Recommended for hard and soft switching flyback topologies for LED lighting, low power chargers and adapters, audio, AUX power and industrial power. Also suitable for PFC stage in consumer applications and solar.
- Best-in-class FOM RDS(on)*Eoss; reduced Qg, Ciss and Coss
- Best-in-class DPAK RDS(on)
- Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
- Integrated Zener diode ESD protection
- Fully qualified according to JEDEC for industrial applications
- Fully optimized portfolio
- Best-in-class performance, easy to drive and to parallel
- Enabling higher power density designs, BOM savings and lower assembly costs
- Better production yield by reducing ESD related failures
- Less production issues and reduced field returns
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
0.31ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
84W
No. of Pins
3Pins
Product Range
CoolMOS P7
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
13A
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
Power Dissipation
84W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate