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IPL65R095CFD7AUMA1
Power MOSFET, N Channel, 650 V, 29 A, 0.068 ohm, VSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPL65R095CFD7AUMA1
Newark Part No.25AK0801
Product RangeCoolMOS CFD7 SJ Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.900 |
| 10+ | $3.900 |
| 25+ | $3.900 |
| 50+ | $3.900 |
| 100+ | $3.840 |
| 250+ | $3.800 |
| 500+ | $3.760 |
| 1000+ | $3.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.90
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPL65R095CFD7AUMA1
Newark Part No.25AK0801
Product RangeCoolMOS CFD7 SJ Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id29A
On Resistance Rds(on)0.068ohm
Drain Source On State Resistance0.068ohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation171W
Power Dissipation Pd171W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFD7 SJ Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.068ohm
Transistor Case Style
VSON
Rds(on) Test Voltage
10V
Power Dissipation
171W
No. of Pins
4Pins
Product Range
CoolMOS CFD7 SJ Series
MSL
MSL 2A - 4 weeks
Channel Type
N Channel
Continuous Drain Current Id
29A
Drain Source On State Resistance
0.068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
171W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate