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IPP042N03LGXKSA1
MOSFET, N CH, 70A, 30V, PG-TO220-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP042N03LGXKSA1Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.60R2736
Also Known AsIPP042N03L G, SP000680792
Your Part Number
3,394 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.640 |
| 10+ | $1.410 |
| 100+ | $1.080 |
| 500+ | $0.958 |
| 1000+ | $0.834 |
| 2500+ | $0.678 |
| 10000+ | $0.659 |
Price for:Each
Minimum: 1
Multiple: 1
$1.64
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP042N03LGXKSA1Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.60R2736
Also Known AsIPP042N03L G, SP000680792
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance4200µohm
On Resistance Rds(on)0.0035ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd79W
Gate Source Threshold Voltage Max1V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IPP042N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Logic level
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Avalanche rated
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0035ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
79W
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4200µohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate