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IPW60R040C7XKSA1
Power MOSFET, N Channel, 600 V, 50 A, 0.04 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPW60R040C7XKSA1
Newark Part No.13AC9095
Product RangeCoolMOS C7 Series
Technical Datasheet
467 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $7.570 |
| 10+ | $7.570 |
| 25+ | $7.570 |
| 50+ | $7.570 |
| 100+ | $7.570 |
| 480+ | $7.570 |
| 720+ | $7.570 |
Price for:Each
Minimum: 1
Multiple: 1
$7.57
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R040C7XKSA1
Newark Part No.13AC9095
Product RangeCoolMOS C7 Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id50A
On Resistance Rds(on)0.034ohm
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation227W
Power Dissipation Pd227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7 Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPW60R040C7XKSA1
2 Products Found
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.034ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
227W
No. of Pins
3Pins
Product Range
CoolMOS C7 Series
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
Power Dissipation Pd
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate