Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPW60R041P6FKSA1
Newark Part No.12AC9733
Product RangeCoolMOS P6
Technical Datasheet
17 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
Quantity | Price |
---|---|
1+ | $3.580 |
10+ | $3.580 |
25+ | $3.580 |
50+ | $3.580 |
100+ | $3.580 |
480+ | $3.580 |
Price for:Each
Minimum: 1
Multiple: 1
$3.58
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R041P6FKSA1
Newark Part No.12AC9733
Product RangeCoolMOS P6
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id77.5A
On Resistance Rds(on)0.037ohm
Drain Source On State Resistance0.041ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation481W
Power Dissipation Pd481W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P6
Qualification-
MSL-
Product Overview
600V CoolMOS™ P6 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS.
- Increased MOSFET dv/dt ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Halogen free moulded compound
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.037ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
481W
No. of Pins
3Pins
Product Range
CoolMOS P6
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
77.5A
Drain Source On State Resistance
0.041ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
481W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate