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| Quantity | Price |
|---|---|
| 1+ | $2.310 |
| 10+ | $1.840 |
| 100+ | $1.840 |
| 500+ | $1.820 |
| 1000+ | $1.820 |
| 3000+ | $1.800 |
| 5000+ | $1.780 |
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$2.31
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF2805PBF
Newark Part No.38K2761
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id175A
Drain Source On State Resistance4700µohm
On Resistance Rds(on)0.0047ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation330W
Power Dissipation Pd330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF2805PBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
4700µohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
330W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
175A
On Resistance Rds(on)
0.0047ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for IRF2805PBF
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate