IRF540NSTRLPBF
Power MOSFET, N Channel, 100 V, 33 A, 44 mohm, TO-263 (D2PAK), Surface Mount
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF540NSTRLPBFCopy |
| Manufacturer Standard Lead Time | 39 weeks |
| Newark Part No. | Re-Reel40M7920RL Cut Tape40M7920 |
| Also Known As | SP001563324 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.470 | $4.47 |
| Total Price | $4.47 | ||
| Quantity | Price |
|---|---|
| 1+ | $4.470 |
| 50+ | $3.020 |
| 100+ | $2.200 |
| 250+ | $2.030 |
| 500+ | $1.860 |
| 1000+ | $1.760 |
| 2500+ | $1.710 |
| 5000+ | $1.550 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF540NSTRLPBFCopy |
| Manufacturer Standard Lead Time | 39 weeks |
| Newark Part No. | Re-Reel40M7920RL Cut Tape40M7920 |
| Also Known As | SP001563324 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 33A |
| Drain Source On State Resistance | 0.044ohm |
| On Resistance Rds(on) | 0.044ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 130W |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 130W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Applications
Power Management
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 0.044ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 33A |
| On Resistance Rds(on) | 0.044ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 130W |
| Power Dissipation | 130W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |