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| Quantity | Price |
|---|---|
| 1+ | $0.302 |
| 10+ | $0.302 |
| 25+ | $0.302 |
| 50+ | $0.302 |
| 100+ | $0.302 |
| 250+ | $0.302 |
| 500+ | $0.302 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.30
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7820TRPBF
Newark Part No.99AC3985
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.7A
Drain Source On State Resistance0.078ohm
On Resistance Rds(on)0.0625ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd2.5W
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.078ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.5W
No. of Pins
8Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.7A
On Resistance Rds(on)
0.0625ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate