Print Page
IRFB4115PBF.
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Fulfilled by Avnet
Notify me when back in stock
| Quantity | Price |
|---|---|
| 10+ | $3.160 |
| 100+ | $2.600 |
| 500+ | $2.120 |
| 1000+ | $1.980 |
| 3000+ | $1.890 |
Price for:Each
Minimum: 50
Multiple: 1
$158.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB4115PBF.
Newark Part No.27AC6766
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id104A
On Resistance Rds(on)0.0093ohm
Drain Source On State Resistance0.0093ohm
Transistor MountingThrough Hole
Power Dissipation Pd380W
Rds(on) Test Voltage20V
Transistor Case StyleTO-220AB
Gate Source Threshold Voltage Max5V
Power Dissipation380W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Halogen-free
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.0093ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
104A
Drain Source On State Resistance
0.0093ohm
Power Dissipation Pd
380W
Transistor Case Style
TO-220AB
Power Dissipation
380W
Operating Temperature Max
175°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate