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IRFB7730PBF
Power MOSFET, HEXFET, N Channel, 75 V, 195 A, 0.0026 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $2.680 |
| 10+ | $2.460 |
| 25+ | $2.460 |
| 50+ | $2.460 |
| 100+ | $2.460 |
| 250+ | $2.460 |
| 500+ | $2.460 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB7730PBF
Newark Part No.31Y2058
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id195A
On Resistance Rds(on)0.0026ohm
Drain Source On State Resistance0.0026ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd375mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation375mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFB7730PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. The StrongIRFET™ power MOSFET is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0026ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
375mW
Gate Source Threshold Voltage Max
3.7V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
195A
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
375mW
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate