Print Page
IRFP1405PBF
Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole
Image is for illustrative purposes only. Please refer to product description.
1,108 In Stock
Need more?
363 Delivery in 1-3 Business Days(US stock)
745 Delivery in 2-4 Business Days(UK stock)
Order before 9pm
| Quantity | Price |
|---|---|
| 1+ | $2.410 |
| 10+ | $2.210 |
| 100+ | $2.210 |
| 800+ | $2.040 |
Price for:Each
Minimum: 1
Multiple: 1
$2.41
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP1405PBF
Newark Part No.38K2555
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id160A
Drain Source On State Resistance5300µohm
On Resistance Rds(on)0.0053ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Power Dissipation Pd310W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFP1405PBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
5300µohm
Transistor Case Style
TO-247AC
Power Dissipation Pd
310W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
160A
On Resistance Rds(on)
0.0053ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate