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1+ | $4.650 |
10+ | $3.600 |
100+ | $2.560 |
500+ | $2.140 |
1600+ | $2.100 |
3200+ | $2.020 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP250MPBF
Newark Part No.91Y4707
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id30A
On Resistance Rds(on)0.075ohm
Drain Source On State Resistance0.075ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd214W
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- Single N-channel HEXFET® power MOSFET
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Dynamic dv/dt rating
- Ease of paralleling
- Simple drive requirements
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- Targeted for high power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.075ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation Pd
214W
No. of Pins
3Pins
Product Range
HEXFET
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for IRFP250MPBF
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate