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IXFB100N50Q3
Power MOSFET, Q3-Class, N Channel, 500 V, 100 A, 0.049 ohm, PLUS264, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFB100N50Q3Copy
Newark Part No.02AC9796
Product RangeHiPerFET Series
Your Part Number
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFB100N50Q3Copy
Newark Part No.02AC9796
Product RangeHiPerFET Series
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id100A
Drain Source On State Resistance0.049ohm
On Resistance Rds(on)0.049ohm
Transistor Case StylePLUS264
Transistor MountingThrough Hole
Power Dissipation Pd1.56kW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation1.56kW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHiPerFET Series
Qualification-
SVHCTo Be Advised
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.049ohm
Transistor Case Style
PLUS264
Power Dissipation Pd
1.56kW
Gate Source Threshold Voltage Max
6.5V
No. of Pins
3Pins
Product Range
HiPerFET Series
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.049ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
1.56kW
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate