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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFB210N30P3
Newark Part No.68X2857
Technical Datasheet
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Quantity | Price |
---|---|
1+ | $42.870 |
5+ | $42.470 |
10+ | $42.070 |
25+ | $36.950 |
50+ | $34.660 |
100+ | $32.350 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFB210N30P3
Newark Part No.68X2857
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id210A
Drain Source On State Resistance0.0145ohm
On Resistance Rds(on)0.0145ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Power Dissipation Pd1.89kW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.89kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
Product Overview
The IXFB210N30P3 is a N-channel enhancement mode Power MOSFET features dynamic dv/dt rating, fast intrinsic rectifier and low drain-to-tab capacitance.
- Fast intrinsic rectifier
- Dynamic dv/dt rating
- Low drain to tab capacitance
- Easy to mount
- Space savings
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.0145ohm
Transistor Case Style
TO-264
Power Dissipation Pd
1.89kW
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
210A
On Resistance Rds(on)
0.0145ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
1.89kW
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability