Print Page
IXFN200N10P
MOSFET TRAN, N CHANNEL, 200A, 100V
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN200N10PCopy |
| Manufacturer Standard Lead Time | 25 weeks |
| Newark Part No. | 58M7621 |
| Product Range | Polar(TM) HiPerFET |
| Your Part Number | |
| Technical Datasheet |
1,542 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $48.410 |
| 10+ | $35.670 |
| 100+ | $34.360 |
| 500+ | $33.040 |
| 1000+ | $31.720 |
| 2500+ | $30.410 |
| 10000+ | $29.090 |
Price for:Each
Minimum: 1
Multiple: 1
$48.41
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN200N10PCopy |
| Manufacturer Standard Lead Time | 25 weeks |
| Newark Part No. | 58M7621 |
| Product Range | Polar(TM) HiPerFET |
| Technical Datasheet | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 200A |
| Drain Source Voltage Vds | 100V |
| On Resistance Rds(on) | 0.0075ohm |
| Drain Source On State Resistance | 7500µohm |
| Rds(on) Test Voltage | 15V |
| Transistor Case Style | ISOTOP |
| Transistor Mounting | Module |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 680W |
| Power Dissipation Pd | 680W |
| Operating Temperature Max | 175°C |
| No. of Pins | 4Pins |
| Qualification | - |
| Product Range | Polar(TM) HiPerFET |
| MSL | - |
| SVHC | To Be Advised |
Product Overview
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
Applications
Power Management, Lighting
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 7500µohm |
| Transistor Case Style | ISOTOP |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation Pd | 680W |
| No. of Pins | 4Pins |
| Product Range | Polar(TM) HiPerFET |
| SVHC | To Be Advised |
| Continuous Drain Current Id | 200A |
|---|---|
| On Resistance Rds(on) | 0.0075ohm |
| Rds(on) Test Voltage | 15V |
| Transistor Mounting | Module |
| Power Dissipation | 680W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| MSL | - |
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | To Be Advised |
| Download Product Compliance Certificate | Product Compliance Certificate |