Print Page
IXFN24N100
Bipolar (BJT) Single Transistor, N Channel, 24 A, 1 kV, 0.39 ohm, 10 V, 5.5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN24N100
Newark Part No.14J1684
Technical Datasheet
193 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $70.570 |
| 5+ | $66.460 |
| 10+ | $62.330 |
| 30+ | $62.330 |
| 50+ | $62.320 |
| 100+ | $61.640 |
Price for:Each
Minimum: 1
Multiple: 1
$70.57
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN24N100
Newark Part No.14J1684
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id24A
Drain Source Voltage Vds1kV
On Resistance Rds(on)0.39ohm
Drain Source On State Resistance0.39ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Transistor MountingModule
Power Dissipation600W
Power Dissipation Pd600W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Low RDS (ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
0.39ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
600W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Continuous Drain Current Id
24A
On Resistance Rds(on)
0.39ohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability