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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. MOSFET Modules
                      Print Page

                      IXFN24N100

                      Bipolar (BJT) Single Transistor, N Channel, 24 A, 1 kV, 0.39 ohm, 10 V, 5.5 V

                      Date/Lot Code

                      IXYS SEMICONDUCTOR IXFN24N100
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerIXYS SEMICONDUCTOR
                      Manufacturer Part NoIXFN24N100
                      Newark Part No.14J1684
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      213 In Stock

                      Need more?

                      Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$70.570
                      5+$66.460
                      10+$62.330
                      30+$62.330
                      50+$62.320
                      100+$61.640
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $70.57
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerIXYS SEMICONDUCTOR
                      Manufacturer Part NoIXFN24N100
                      Newark Part No.14J1684
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds1kV
                      Continuous Drain Current Id24A
                      Drain Source On State Resistance0.39ohm
                      On Resistance Rds(on)0.39ohm
                      Transistor Case StyleISOTOP
                      Transistor MountingModule
                      Rds(on) Test Voltage10V
                      Power Dissipation Pd600W
                      Gate Source Threshold Voltage Max5.5V
                      Power Dissipation600W
                      No. of Pins3Pins
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSL-
                      SVHCNo SVHC (17-Jan-2023)

                      Product Overview

                      The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.

                      • International standard package
                      • miniBLOC with aluminium nitride isolation
                      • UL94V-0 Flammability rating
                      • Low RDS (ON) HDMOS™ process
                      • Rugged polysilicon gate cell structure
                      • Low package inductance
                      • Easy to mount
                      • Space savings
                      • High power density

                      Applications

                      Power Management, Industrial, Motor Drive & Control

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      24A

                      On Resistance Rds(on)

                      0.39ohm

                      Transistor Mounting

                      Module

                      Power Dissipation Pd

                      600W

                      Power Dissipation

                      600W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (17-Jan-2023)

                      Drain Source Voltage Vds

                      1kV

                      Drain Source On State Resistance

                      0.39ohm

                      Transistor Case Style

                      ISOTOP

                      Rds(on) Test Voltage

                      10V

                      Gate Source Threshold Voltage Max

                      5.5V

                      No. of Pins

                      3Pins

                      Product Range

                      -

                      MSL

                      -

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Associated Products

                      2 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (17-Jan-2023)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

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