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IXTN210P10T
MOSFET MODULE, P CH, 100V, 210A
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXTN210P10TCopy |
| Manufacturer Standard Lead Time | 29 weeks |
| Newark Part No. | 71AH4575 |
| Product Range | TrenchP Series |
| Your Part Number | |
| Technical Datasheet |
117 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $74.050 |
| 5+ | $65.170 |
| 10+ | $56.290 |
| 25+ | $53.350 |
| 50+ | $50.410 |
| 100+ | $49.410 |
Price for:Each
Minimum: 1
Multiple: 1
$74.05
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXTN210P10TCopy |
| Manufacturer Standard Lead Time | 29 weeks |
| Newark Part No. | 71AH4575 |
| Product Range | TrenchP Series |
| Technical Datasheet | |
| Channel Type | P Channel |
| Transistor Polarity | P Channel |
| Continuous Drain Current Id | 210A |
| Drain Source Voltage Vds | 100V |
| On Resistance Rds(on) | 0.0075ohm |
| Drain Source On State Resistance | 7500µohm |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4.5V |
| Power Dissipation | 830W |
| Power Dissipation Pd | 830W |
| Operating Temperature Max | 150°C |
| Product Range | TrenchP Series |
| SVHC | To Be Advised |
Product Overview
IXTN210P10T is a TrenchP™ power MOSFET. Suitable for high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators and battery charger applications.
- P-channel enhancement mode
- Avalanche rated and fast intrinsic rectifier
- International standard package
- Low intrinsic gate resistance
- miniBLOC with aluminium nitride isolation
- Extended FBSOA and low RDS(ON) and QG
- Easy to mount, space savings and high power density
- 210A continuous drain current Id
- 100V drain source voltage Vds, 10V Rds(on) test voltage, 4.5V max gate source threshold voltage
- 0.0075ohm drain source on state resistance
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 210A |
| On Resistance Rds(on) | 0.0075ohm |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 830W |
| Operating Temperature Max | 150°C |
| SVHC | To Be Advised |
| Transistor Polarity | P Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 7500µohm |
| Gate Source Threshold Voltage Max | 4.5V |
| Power Dissipation Pd | 830W |
| Product Range | TrenchP Series |
Technical Docs (1)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | To Be Advised |
| Download Product Compliance Certificate | Product Compliance Certificate |