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IXTP12N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 12 A, 0.3 ohm, TO-220AB, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP12N65X2
Newark Part No.02AC9840
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.630 |
Price for:Each
Minimum: 1
Multiple: 1
$3.63
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP12N65X2
Newark Part No.02AC9840
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id12A
Drain Source On State Resistance0.3ohm
On Resistance Rds(on)0.3ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd180W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation180W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.3ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
180W
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.3ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
180W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability