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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP3N120
Newark Part No.58M7663
Technical Datasheet
505 In Stock
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Quantity | Price |
---|---|
1+ | $11.120 |
10+ | $10.030 |
25+ | $9.370 |
50+ | $8.710 |
100+ | $7.910 |
250+ | $7.380 |
500+ | $6.860 |
Price for:Each
Minimum: 1
Multiple: 1
$11.12
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP3N120
Newark Part No.58M7663
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id3A
Drain Source On State Resistance4.5ohm
On Resistance Rds(on)4.5ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd200W
Gate Source Threshold Voltage Max5V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXTP3N120 is a high voltage N-channel enhancement-mode Power MOSFET features avalanche rated and rated for unclamped inductive load switching (UIS).
- High dV/dt
- International standard package
- Low RDS (ON)
- UL94V-0 Flammability rating
- Easy to mount
- Space savings
- High power density
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
4.5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
200W
Power Dissipation
200W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
4.5ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability