Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH120N30X3
Newark Part No.03AH0522
Product RangeX3-Class HiPerFET Series
Technical Datasheet
235 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $12.860 |
5+ | $12.860 |
10+ | $12.860 |
25+ | $12.860 |
100+ | $12.860 |
500+ | $12.860 |
Price for:Each
Minimum: 1
Multiple: 1
$12.86
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH120N30X3
Newark Part No.03AH0522
Product RangeX3-Class HiPerFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id120A
On Resistance Rds(on)0.0086ohm
Drain Source On State Resistance0.0086ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd735W
Power Dissipation735W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeX3-Class HiPerFET Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated X3-Class HiPerFET™ power MOSFET. It is suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, PFC circuits, AC and DC motor drives, robotics and servo controls applications.
- Low RDS(ON) and QG
- Low package inductance
- High power density
- Easy to mount
- Space savings
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.0086ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation Pd
735W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.0086ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
735W
Operating Temperature Max
150°C
Product Range
X3-Class HiPerFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability