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IXFN210N20P
Bipolar (BJT) Single Transistor, N Channel, 188 A, 200 V, 0.00105 ohm, 10 V, 4.5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N20P
Newark Part No.03AH0729
Product RangePolar/ HiPerFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $55.410 |
| 5+ | $51.450 |
| 10+ | $47.400 |
| 25+ | $46.320 |
| 50+ | $45.220 |
| 100+ | $44.120 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N20P
Newark Part No.03AH0729
Product RangePolar/ HiPerFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id188A
Drain Source Voltage Vds200V
On Resistance Rds(on)0.00105ohm
Drain Source On State Resistance0.00105ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd1.07kW
Power Dissipation1.07kW
Operating Temperature Max175°C
Product RangePolar/ HiPerFET Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It Is suitable for use in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC and DC motor drives, uninterruptible power supplies, high speed power switching applications.
- miniBLOC with aluminium nitride isolation
- Low RDS(ON) and QG
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
188A
On Resistance Rds(on)
0.00105ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.07kW
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.00105ohm
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
1.07kW
Product Range
Polar/ HiPerFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability