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IXSH100N65L2KHV
Silicon Carbide MOSFET, Single, N Channel, 99 A, 650 V, 0.033 ohm, TO-247
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Available to Order
Manufacturer Standard Lead Time: 22 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $16.020 |
| 25+ | $15.450 |
| 100+ | $13.860 |
| 250+ | $13.100 |
| 500+ | $12.060 |
| 1000+ | $11.620 |
| 2500+ | $11.040 |
Price for:Each
Minimum: 1
Multiple: 1
$16.02
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXSH100N65L2KHV
Newark Part No.10AN0364
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id99A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.033ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation454W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
99A
Drain Source On State Resistance
0.033ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
454W
Product Range
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate