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IXTH48P20P
Power MOSFET, P Channel, 200 V, 48 A, 0.085 ohm, TO-247, Through Hole
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ManufacturerLITTELFUSE
Manufacturer Part NoIXTH48P20P
Newark Part No.03AH1519
Product RangePolarP Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $8.170 |
| 5+ | $8.170 |
| 10+ | $8.170 |
| 25+ | $8.170 |
| 100+ | $8.170 |
| 500+ | $8.170 |
| 1000+ | $8.170 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH48P20P
Newark Part No.03AH1519
Product RangePolarP Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id48A
On Resistance Rds(on)0.085ohm
Drain Source On State Resistance0.085ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation462W
Power Dissipation Pd462W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangePolarP Series
SVHCTo Be Advised
Product Overview
P-channel enhancement mode avalanche rated PolarP™ power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test equipment and current regulators applications.
- Rugged PolarP™ process
- Low package inductance
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.085ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
462W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
48A
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
462W
Operating Temperature Max
150°C
Product Range
PolarP Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability