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IXTH6N120
Power MOSFET, N Channel, 1.2 kV, 6 A, 2.6 ohm, TO-247AD, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $13.910 |
| 5+ | $13.910 |
| 10+ | $13.900 |
| 25+ | $12.840 |
| 100+ | $12.840 |
| 500+ | $12.840 |
| 1000+ | $12.840 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH6N120
Newark Part No.03AH1525
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id6A
On Resistance Rds(on)2.6ohm
Drain Source On State Resistance2.6ohm
Transistor Case StyleTO-247AD
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd300W
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
2.6ohm
Transistor Case Style
TO-247AD
Rds(on) Test Voltage
10V
Power Dissipation Pd
300W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
2.6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation
300W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability