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IXTH8P50
Power MOSFET, P Channel, 500 V, 8 A, 1.2 ohm, TO-247, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $6.260 |
| 25+ | $6.260 |
| 100+ | $6.260 |
| 250+ | $6.260 |
| 500+ | $6.260 |
| 1000+ | $6.260 |
Price for:Each
Minimum: 1
Multiple: 1
$6.26
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH8P50
Newark Part No.03AH1537
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8A
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation180W
Power Dissipation Pd180W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
P-channel enhancement mode avalanche rated standard power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test equipment applications.
- Low RDS(ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance (<lt/> 5nH)- easy to drive and to protect
- Easy to mount with 1 screw (isolated mounting screw hole)
- Space savings
- High power density
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.2ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
180W
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
180W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability