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IXTN90N25L2
Bipolar (BJT) Single Transistor, N Channel, 90 A, 250 V, 0.036 ohm, 10 V, 4.5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXTN90N25L2
Newark Part No.03AH1604
Product RangeLinearL2 Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $43.010 |
| 5+ | $43.010 |
| 10+ | $43.010 |
| 25+ | $43.010 |
| 50+ | $43.010 |
| 100+ | $43.010 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTN90N25L2
Newark Part No.03AH1604
Product RangeLinearL2 Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds250V
On Resistance Rds(on)0.036ohm
Drain Source On State Resistance0.036ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd735W
Power Dissipation735W
Operating Temperature Max150°C
Product RangeLinearL2 Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode guaranteed FBSOA avalanche rated suitable for use in programmable loads, current regulators, DC-DC converters, battery chargers, DC choppers, temperature and lighting controls applications.
- Linear L2™ power MOSFET w/extended FBSOA
- Designed for linear operation
- Guaranteed FBSOA at 75°C
- Moulding epoxy meets UL94 V-0 flammability classification
- MiniBLOC with aluminium nitride isolation
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.036ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
735W
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.036ohm
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
735W
Product Range
LinearL2 Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability