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IXTX90P20P
Power MOSFET, P Channel, 200 V, 90 A, 0.044 ohm, PLUS247, Through Hole
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ManufacturerLITTELFUSE
Manufacturer Part NoIXTX90P20P
Newark Part No.03AH1892
Product RangePolarP Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $22.390 |
| 5+ | $22.390 |
| 10+ | $22.390 |
| 25+ | $20.790 |
| 100+ | $19.410 |
| 500+ | $18.640 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTX90P20P
Newark Part No.03AH1892
Product RangePolarP Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id90A
On Resistance Rds(on)0.044ohm
Drain Source On State Resistance0.044ohm
Transistor Case StylePLUS247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation890W
Power Dissipation Pd890W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangePolarP Series
SVHCTo Be Advised
Product Overview
P-channel enhancement mode avalanche rated PolarP™ power MOSFET suitable for use in high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators applications.
- Rugged PolarP™ process
- Fast intrinsic diode
- Low package inductance
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.044ohm
Transistor Case Style
PLUS247
Rds(on) Test Voltage
10V
Power Dissipation
890W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.044ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Product Range
PolarP Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability