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DN2530N8-G
Power MOSFET, N Channel, 300 V, 200 mA, 12 ohm, SOT-89, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 44 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.931 |
Price for:Each (Supplied on Full Reel)
Minimum: 2000
Multiple: 2000
$1,862.00
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoDN2530N8-G
Newark Part No.67X5068
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id200mA
Drain Source On State Resistance12ohm
On Resistance Rds(on)12ohm
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
12ohm
Transistor Case Style
SOT-89
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
12ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
0V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability