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ManufacturerMICRON
Manufacturer Part NoMT53E2G32D4DT-046 WT:A
Newark Part No.80AH8347
Technical Datasheet
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E2G32D4DT-046 WT:A
Newark Part No.80AH8347
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density64Gbit
DRAM Density64Gbit
DRAM Memory Configuration2G x 32bit
Memory Configuration2G x 32bit
Clock Frequency2.133GHz
Clock Frequency Max2.133GHz
IC Case / PackageVFBGA
Memory Case StyleVFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
Access Time468ps
IC MountingSurface Mount
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT53E2G32D4DT-046 WT:A is a 64Gbit LPDDR4 DRAM memory. The low-power dynamic random access memory (LPDRAM) is DRAM optimized specifically to address power consumption issues in battery operated applications. Originally developed for handsets and ultra-portables. LPDDR4 is a balance of performance, power, latency and physical space making it energy-efficient without compromising performance.
- 2.133GHz clock frequency
- Operating temperature range from -30°C to 85°C
- Performance: peak bandwidth 33% faster compared to DDR4
- Power consumption: 5 times lower power consumption in standby mode compared to standard DRAM
- Package designs save PCB space
Technical Specifications
DRAM Type
Mobile LPDDR4
DRAM Density
64Gbit
Memory Configuration
2G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
VFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (17-Jan-2023)
Memory Density
64Gbit
DRAM Memory Configuration
2G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
VFBGA
No. of Pins
200Pins
Access Time
468ps
Operating Temperature Min
-25°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate