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CM200DU-12H
IGBT Module, Dual [Half Bridge], 200 A, 600 V, 650 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-12H
Newark Part No.20M0992
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-12H
Newark Part No.20M0992
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current200A
DC Collector Current200A
Collector Emitter Saturation Voltage600V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd650W
Power Dissipation650W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
650W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
650W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
-
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate