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CM200DU-12NFH
IGBT Module, Dual [Half Bridge], 200 A, 2.7 V, 590 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-12NFH
Newark Part No.86H8424
Product RangeNFH Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
| Quantity | Price |
|---|---|
| 10+ | $159.940 |
| 25+ | $159.910 |
| 50+ | $158.760 |
| 100+ | $157.250 |
Price for:Each
Minimum: 10
Multiple: 1
$1,599.40
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-12NFH
Newark Part No.86H8424
Product RangeNFH Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current200A
DC Collector Current200A
Collector Emitter Saturation Voltage2.7V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd590W
Power Dissipation590W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeNFH Series
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage
2.7V
Power Dissipation Pd
590W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
590W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Product Range
NFH Series
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate