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GAN041-650WSBQ
Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | NEXPERIA |
|---|---|
| Manufacturer Part No | GAN041-650WSBQCopy |
| Manufacturer Standard Lead Time | 6 weeks |
| Newark Part No. | 45AJ4080 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $16.760 |
| 10+ | $12.290 |
| 25+ | $11.690 |
| 50+ | $11.100 |
| 100+ | $10.500 |
| 250+ | $10.490 |
| 500+ | $10.460 |
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Product Information
| Manufacturer | NEXPERIA |
|---|---|
| Manufacturer Part No | GAN041-650WSBQCopy |
| Manufacturer Standard Lead Time | 6 weeks |
| Newark Part No. | 45AJ4080 |
| Technical Datasheet | |
| Drain Source Voltage Vds | 650V |
| Continuous Drain Current Id | 47.2A |
| On Resistance Rds(on) Max | 0.041ohm |
| Drain Source On State Resistance | 0.041ohm |
| Typical Gate Charge | 22nC |
| Transistor Case Style | TO-247 |
| Transistor Mounting | Through Hole |
| No. of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
GAN041-650WSBQ is a 650V, 35mohm Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. The applications include hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drives.
- Ultra-low reverse recovery charge, simple gate drive (0V to +10V or 12V), robust gate oxide (±20V)
- High gate threshold voltage (+4V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode, transient over-voltage capability (800V)
- Drain-source voltage is 650V max (55°C ≤ Tj ≤ 175°C)
- Drain current is 47.2A max (VGS = 10V; Tmb = 25°C), total power dissipation is 187W max (Tmb = 25°C)
- Drain-source on-state resistance is 35mohm typ (VGS = 10V; ID = 32A; Tj = 25°C)
- Gate-drain charge is 6.6nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
- Total gate charge is 22nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
- Recovered charge is 150nC typ (IS = 32A; dIS/dt = -1000A/µs; VGS = 0V; VDS = 400V)
- 3 leads SOT429 package, junction temperature range from -55 to 175°C
Technical Specifications
| Drain Source Voltage Vds | 650V |
|---|---|
| On Resistance Rds(on) Max | 0.041ohm |
| Typical Gate Charge | 22nC |
| Transistor Mounting | Through Hole |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
| Continuous Drain Current Id | 47.2A |
|---|---|
| Drain Source On State Resistance | 0.041ohm |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Qualification | - |
Technical Docs (2)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |