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Quantity | Price |
---|---|
1+ | $0.246 |
10+ | $0.246 |
25+ | $0.245 |
50+ | $0.245 |
100+ | $0.245 |
250+ | $0.225 |
500+ | $0.225 |
1000+ | $0.225 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$0.25
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV213SN,215
Newark Part No.97K7752
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.9A
Drain Source On State Resistance0.25ohm
On Resistance Rds(on)0.213ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd2W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for PMV213SN,215
2 Products Found
Product Overview
The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications.
- Low conduction losses due to low ON-state resistance
- -55 to 150°C Junction temperature range
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.25ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.9A
On Resistance Rds(on)
0.213ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability