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Quantity | Price |
---|---|
1+ | $2.960 |
10+ | $2.020 |
25+ | $1.840 |
50+ | $1.670 |
100+ | $1.490 |
250+ | $1.450 |
500+ | $1.290 |
1000+ | $1.100 |
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Multiple: 1
$2.96
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN0R9-25YLC,115
Newark Part No.55T6965
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
On Resistance Rds(on)750µohm
Drain Source On State Resistance990µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd137W
Gate Source Threshold Voltage Max1.41V
Power Dissipation137W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
The PSMN0R9-25YLC is a 25V logic level N-channel Enhancement Mode MOSFET using NextPower technology. Optimised for 4.5V gate drive utilising NextPower Superjunction technology. This device is designed for power OR-ing, server power supplies and sync rectifier applications.
- Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
- Ultra low RDS (ON) and low parasitic inductance
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
750µohm
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.41V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
990µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
137W
Power Dissipation
137W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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