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| Manufacturer | NXP |
|---|---|
| Manufacturer Part No | MRFE6VP61K25HR6Copy |
| Manufacturer Standard Lead Time | 94 weeks |
| Newark Part No. | Full Reel19T6331 Cut Tape41AH8200 |
| Your Part Number | |
| Technical Datasheet |
Available to Order
Manufacturer Standard Lead Time: 94 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 150 | $421.150 | $63,172.50 |
| Total Price | $63,172.50 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 150+ | $421.150 |
Full Reel
| Quantity | Price |
|---|---|
| 150+ | $506.690 |
| 450+ | $496.550 |
| 750+ | $486.420 |
| 1500+ | $476.280 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | NXP |
|---|---|
| Manufacturer Part No | MRFE6VP61K25HR6Copy |
| Manufacturer Standard Lead Time | 94 weeks |
| Newark Part No. | Full Reel19T6331 Cut Tape41AH8200 |
| Technical Datasheet | |
| Drain Source Voltage Vds | 133VDC |
| Power Dissipation | 1.333kW |
| Continuous Drain Current Id | - |
| Power Dissipation Pd | 1.333kW |
| Operating Frequency Min | 1.8MHz |
| Operating Frequency Max | 600MHz |
| Transistor Case Style | NI-1230 |
| No. of Pins | 4Pins |
| RF Transistor Case | NI-1230 |
| Operating Temperature Max | 225°C |
| Channel Type | N Channel |
| Transistor Mounting | Flange |
| Product Range | - |
| MSL | - |
| SVHC | No SVHC (08-Jul-2021) |
Product Overview
MRFE6VP61K25HR6 is a wideband RF power LDMOS transistor in a 4 pin NI-1230 package. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analogue and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used single ended or in a push pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30V to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage for improved class C operation
- Characterized with series equivalent large signal impedance parameters
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Drain Source Voltage Vds | 133VDC |
|---|---|
| Continuous Drain Current Id | - |
| Operating Frequency Min | 1.8MHz |
| Transistor Case Style | NI-1230 |
| RF Transistor Case | NI-1230 |
| Channel Type | N Channel |
| Product Range | - |
| SVHC | No SVHC (08-Jul-2021) |
| Power Dissipation | 1.333kW |
|---|---|
| Power Dissipation Pd | 1.333kW |
| Operating Frequency Max | 600MHz |
| No. of Pins | 4Pins |
| Operating Temperature Max | 225°C |
| Transistor Mounting | Flange |
| MSL | - |
Alternatives for MRFE6VP61K25HR6
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Associated Products
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (08-Jul-2021) |
| Download Product Compliance Certificate | Product Compliance Certificate |
