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MRFE6VP61K25HSR5
RF FET Transistor, 125 V, 100 mA, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230S
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | NXP |
|---|---|
| Manufacturer Part No | MRFE6VP61K25HSR5Copy |
| Manufacturer Standard Lead Time | 101 weeks |
| Newark Part No. | 19T6332 |
| Your Part Number | |
| Technical Datasheet |
Available to Order
Manufacturer Standard Lead Time: 101 week(s)
| Quantity | Price |
|---|---|
| 50+ | $415.640 |
| 150+ | $407.330 |
| 250+ | $399.010 |
Price for:Each (Supplied on Cut Tape)
Minimum: 50
Multiple: 50
$20,782.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | NXP |
|---|---|
| Manufacturer Part No | MRFE6VP61K25HSR5Copy |
| Manufacturer Standard Lead Time | 101 weeks |
| Newark Part No. | 19T6332 |
| Technical Datasheet | |
| Drain Source Voltage Vds | 125V |
| Continuous Drain Current Id | 100mA |
| Power Dissipation | 1.333kW |
| Operating Frequency Min | 1.8MHz |
| Power Dissipation Pd | 1.333kW |
| Operating Frequency Max | 600MHz |
| Transistor Case Style | NI-1230S |
| No. of Pins | 4Pins |
| RF Transistor Case | NI-1230S |
| Operating Temperature Max | 225°C |
| Channel Type | N Channel |
| Transistor Mounting | Flange |
| Product Range | - |
| MSL | - |
| SVHC | No SVHC (27-Jun-2024) |
Product Overview
The MRFE6VP61K25HSR5 is a 125V N-channel wideband RF Power LDMOS Transistor featured with high ruggedness. This enhancement mode lateral MOSFET is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single-ended or in a push-pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30 to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage for improved class C operation
- Characterized with series equivalent large-signal impedance parameters
- 74.6% Typical efficiency
- 22.9dB Typical power gain (at 230MHz)
- -6/+10V Gate to Source voltage (VGS)
- LDMOS Die technology
- 0.159°C/W Thermal resistance
Applications
Industrial, Communications & Networking, Defence, Military & Aerospace, RF Communications
Warnings
ESD sensitive device, take proper precaution while handling the device.
Technical Specifications
| Drain Source Voltage Vds | 125V |
|---|---|
| Power Dissipation | 1.333kW |
| Power Dissipation Pd | 1.333kW |
| Transistor Case Style | NI-1230S |
| RF Transistor Case | NI-1230S |
| Channel Type | N Channel |
| Product Range | - |
| SVHC | No SVHC (27-Jun-2024) |
| Continuous Drain Current Id | 100mA |
|---|---|
| Operating Frequency Min | 1.8MHz |
| Operating Frequency Max | 600MHz |
| No. of Pins | 4Pins |
| Operating Temperature Max | 225°C |
| Transistor Mounting | Flange |
| MSL | - |
Associated Products
1 Product Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (27-Jun-2024) |
| Download Product Compliance Certificate | Product Compliance Certificate |