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| Quantity | Price |
|---|---|
| 1+ | $3.530 |
| 10+ | $2.870 |
| 25+ | $2.730 |
| 50+ | $2.600 |
| 100+ | $2.460 |
| 250+ | $2.450 |
| 500+ | $2.420 |
| 1000+ | $2.350 |
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Multiple: 1
$3.53
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHUF76629D3ST
Newark Part No.54AH8831
Product RangeUltraFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id20A
Drain Source On State Resistance0.041ohm
On Resistance Rds(on)0.041ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation150W
Power Dissipation Pd150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeUltraFET
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
No. of Pins
3Pins
Product Range
UltraFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.041ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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