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2N7002WT1G
Power MOSFET, N Channel, 60 V, 340 mA, 1.6 ohm, SC-70, Surface Mount
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| 50+ | $0.040 |
| 100+ | $0.040 |
| 250+ | $0.040 |
| 500+ | $0.040 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002WT1G
Newark Part No.09R9865
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id340mA
Drain Source On State Resistance1.6ohm
On Resistance Rds(on)1.6ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd330mW
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
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Product Overview
The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA applications.
- Low RDS (ON)
- Small footprint surface-mount package
- Halogen-free
- ESD Protected
- -55 to 150°C Operating junction temperature range
Applications
Portable Devices, Consumer Electronics, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
330mW
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
340mA
On Resistance Rds(on)
1.6ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SC-70
Power Dissipation
330mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability