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BC856BWT1G
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 150 mW, SC-70, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC856BWT1G
Newark Part No.80Y6672
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo65V
Collector Emitter Voltage Max65V
Continuous Collector Current100mA
DC Collector Current100mA
Power Dissipation Pd150mW
Power Dissipation150mW
Transistor Case StyleSC-70
Transistor MountingSurface Mount
DC Current Gain hFE150hFE
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min150hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Product Overview
The BC856BWT1G is a PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in a package which is designed for low power surface-mount applications.
- AEC-Q101 qualified and PPAP capable
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
65V
DC Collector Current
100mA
Power Dissipation
150mW
Transistor Mounting
Surface Mount
No. of Pins
3Pins
DC Current Gain hFE Min
150hFE
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (07-Nov-2024)
Collector Emitter Voltage V(br)ceo
65V
Continuous Collector Current
100mA
Power Dissipation Pd
150mW
Transistor Case Style
SC-70
DC Current Gain hFE
150hFE
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate