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BD681G.
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 40 W, 4 A, 750 RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $2.050 |
| 10+ | $1.170 |
| 100+ | $0.851 |
| 500+ | $0.757 |
| 1000+ | $0.668 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD681G.
Newark Part No.37K9450
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current4A
Transition Frequency-
Power Dissipation Pd40W
Power Dissipation40W
DC Collector Current4A
RF Transistor CaseTO-225
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor Case StyleTO-225AA
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
100V
Transition Frequency
-
Power Dissipation
40W
RF Transistor Case
TO-225
DC Current Gain hFE
750hFE
Transistor Mounting
Through Hole
DC Current Gain hFE Min
750hFE
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
4A
Power Dissipation Pd
40W
DC Collector Current
4A
No. of Pins
3Pins
Transistor Case Style
TO-225AA
Operating Temperature Max
150°C
Product Range
-
MSL
-
Technical Docs (3)
Alternatives for BD681G.
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability