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BSS84LT1G
Power MOSFET, P Channel, 50 V, 130 µA, 10 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 50 week(s)
| Quantity | Price |
|---|---|
| 30000+ | $0.063 |
Price for:Each (Supplied on Full Reel)
Minimum: 30000
Multiple: 30000
$1,890.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS84LT1G
Newark Part No.35P2751
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id130µA
On Resistance Rds(on)10ohm
Drain Source On State Resistance10ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd225mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max2V
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications.
Applications
Communications & Networking, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
50V
On Resistance Rds(on)
10ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
225mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
130µA
Drain Source On State Resistance
10ohm
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-23
Power Dissipation
225mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Alternatives for BSS84LT1G
3 Products Found
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate