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FDB12N50TM
Power MOSFET, N Channel, 500 V, 11.5 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDB12N50TMCopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.06R2487
Your Part Number
20,000 In Stock
| Quantity | Price |
|---|---|
| 800+ | $2.650 |
| 1000+ | $2.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 800
Multiple: 800
$2,120.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB12N50TMCopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.06R2487
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id11.5A
Drain Source On State Resistance0.65ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation165W
No. of Pins3Pins
Operating Temperature Max150°C
SVHCLead
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
165W
Operating Temperature Max
150°C
SVHC
Lead
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.65ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate