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Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Quantity | Price |
---|---|
3000+ | $0.383 |
6000+ | $0.367 |
12000+ | $0.358 |
18000+ | $0.337 |
30000+ | $0.334 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,149.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC640P
Newark Part No.34C0112
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
On Resistance Rds(on)0.039ohm
Drain Source On State Resistance53mohm
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage4.5V
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The FDC640P is a 2.5V specified P-channel MOSFET uses a rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V).
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.039ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
4.5A
Drain Source On State Resistance
53mohm
Power Dissipation Pd
1.6W
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDC640P
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate