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FDD13AN06A0
Power MOSFET, N Channel, 60 V, 9.9 A, 0.0135 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.780 |
| 3000+ | $1.730 |
| 6000+ | $1.600 |
| 12000+ | $1.480 |
| 18000+ | $1.440 |
| 30000+ | $1.420 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$4,450.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD13AN06A0
Newark Part No.50H4193
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id9.9A
On Resistance Rds(on)0.0115ohm
Drain Source On State Resistance0.0135ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd115W
Transistor Case StyleTO-252AA
Gate Source Threshold Voltage Max4V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FDD13AN06A0 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for use in synchronous rectification and battery protection circuit application.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0115ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
115W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
9.9A
Drain Source On State Resistance
0.0135ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-252AA
Power Dissipation
115W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate