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FDD16AN08A0
Power MOSFET, N Channel, 75 V, 50 A, 0.016 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.800 |
| 3000+ | $1.710 |
| 6000+ | $1.640 |
| 12000+ | $1.520 |
| 18000+ | $1.480 |
| 30000+ | $1.440 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$4,500.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD16AN08A0
Newark Part No.94C5748
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id50A
Drain Source On State Resistance0.016ohm
On Resistance Rds(on)0.013ohm
Transistor MountingSurface Mount
Power Dissipation Pd135W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-252AA
Power Dissipation135W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FDD16AN08A0 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for use in synchronous rectification and battery protection circuit application.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-252AA
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.013ohm
Power Dissipation Pd
135W
Gate Source Threshold Voltage Max
4V
Power Dissipation
135W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate