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Available to Order
Manufacturer Standard Lead Time: 2 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $1.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$4,350.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDM3622
Newark Part No.87W8826
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id4.4A
On Resistance Rds(on)0.044ohm
Drain Source On State Resistance0.06ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.1W
Transistor Case StylePower 33
Gate Source Threshold Voltage Max4V
Power Dissipation2.1W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDM3622 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance.
- Low miller charge
- Low Qrr body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive Pulse Formerly developmental type 82744)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.044ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.1W
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4.4A
Drain Source On State Resistance
0.06ohm
Rds(on) Test Voltage
10V
Transistor Case Style
Power 33
Power Dissipation
2.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDM3622
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate