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Available to Order
Manufacturer Standard Lead Time: 13 week(s)
Quantity | Price |
---|---|
3000+ | $0.612 |
6000+ | $0.594 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,836.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC4435BZ
Newark Part No.08N9280
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18A
On Resistance Rds(on)0.015ohm
Drain Source On State Resistance0.02ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd31W
Transistor Case StyleMLP
Gate Source Threshold Voltage Max1.9V
Power Dissipation31W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The FDMC4435BZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 100% UIL tested
- 7kV typical HBM ESD protection level
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.015ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
31W
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.02ohm
Rds(on) Test Voltage
10V
Transistor Case Style
MLP
Power Dissipation
31W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDMC4435BZ
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate