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FDN306P
MOSFET, P-CH, 12V, 2.6A, 3-SSOT, RL
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.192 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$576.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN306P
Newark Part No.04X6260
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id2.6A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.04ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation500mW
Power Dissipation Pd500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.04ohm
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.6A
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
Power Dissipation Pd
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDN306P
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability