Print Page
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 41 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.266 |
| 6000+ | $0.233 |
| 12000+ | $0.208 |
| 18000+ | $0.191 |
| 30000+ | $0.174 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$798.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN336P
Newark Part No.23K1650
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.2A
On Resistance Rds(on)0.122ohm
Drain Source On State Resistance0.2ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max900mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDN336P is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for load switching, battery charging circuits and DC-to-DC conversion. The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
- High performance Trench technology for extremely low RDS (ON)
- 3.6nC Typical low gate charge
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.122ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.2A
Drain Source On State Resistance
0.2ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Alternatives for FDN336P
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate